power transistors 1 publication date: november 2002 sjd00291aed 2SC5809 silicon npn triple diffusion planar type for high breakdown voltage high-speed switching features ? high-speed switching (fall time t f is short) ? high collector-base voltage (emitter open) v cbo ? low collector-emitter saturation voltage v ce(sat) ? to-220d built-in: excellent package with withstand voltage 5 kv guaranteed absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c 1.4 0.2 1.6 0.2 0.8 0.1 0.55 0.15 2.54 0.30 5.08 0.50 123 2.6 0.1 2.9 0.2 4.6 0.2 3.2 0.1 3.0 0.5 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 solder dip unit: mm 1: base 2: collector 3: emitter to-220d-a1 package internal connection b c e marking symbol: c5809 parameter symbol rating unit collector-base voltage (emitter open) v cbo 800 v collector-emitter voltage (base open) v ceo 500 v emitter-base voltage (collector open) v ebo 8v collector current i c 3a peak collector current i cp 6a collector power t c = 25 cp c 30 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 0 500 v collector-base cutoff current (emitter open) i cbo v cb = 800 v, i e = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 0 100 a forward current transfer ratio h fe1 v ce = 5 v, i c = 0.1 a 15 ? h fe2 v ce = 5 v, i c = 3 a 8 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.6 a 0.3 0.6 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 8 mhz turn-on time t on i c = 3.0 a, resistance loaded 1.1 s storage time t stg i b1 = 0.6 a, i b2 = ? 0.6 a 2.0 s fall time t f v cc = 200 v 0.3 s note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
2SC5809 2 sjd00291aed p c ? t a safe operation area r th ? t 0 0 40 80 140 20 120 60 160 100 35 5 10 15 20 25 30 (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) without heat sink (1) (3) (2) collector power dissipation p c (w) ambient temperature t a ( c) 1 10 100 1 000 0.01 0.1 1 10 100 t = 10 ms t = 1 ms t = 1 s non repetitive pulse t c = 25 c i cp i c collector-emitter voltage v ce (v) collector current i c (a) 0.001 100 0.01 1 0.1 10 1 000 0.1 1 10 100 1 000 t a = 25 c (1) without heat sink (2) with a al heat sink 10 10 2 mm (1) (2) time t (s) thermal resistance r th ( c/w)
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